Manufacturer Standard Lead Time:
30 Weeks
Current - Collector (Ic) (Max):
5A
Detailed Description:
Bipolar (BJT) Transistor NPN 200V 5A 1.2W Through Hole TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 1A, 5V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 5A, 1A
Series:
Military, MIL-PRF-19500/455
Package / Case:
TO-205AD, TO-39-3 Metal Can
Supplier Device Package:
TO-39 (TO-205AD)
Voltage - Collector Emitter Breakdown (Max):
200V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
1.2W
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
200nA
Manufacturer:
Microsemi Corporation
This is manufactured by Microsemi Corporation. The manufacturer part number is JANTXV2N5666S. It has typical 30 weeks of manufacturer standard lead time. The maximum collector current includes 5a. It features bipolar (bjt) transistor npn 200v 5a 1.2w through hole to-39 (to-205ad). Furthermore, 40 @ 1a, 5v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 1v @ 5a, 1a is the maximum Vce saturation. The product military, mil-prf-19500/455, is a highly preferred choice for users. Moreover, the product comes in to-205ad, to-39-3 metal can. to-39 (to-205ad) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 200v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 1.2w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 200na is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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