Microsemi Corporation 2N2906AUA
Product Information
Manufacturer Standard Lead Time:
16 Weeks
Current - Collector (Ic) (Max):
600mA
Detailed Description:
Bipolar (BJT) Transistor PNP 60V 600mA 500mW Surface Mount 4-SMD
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 150mA, 10V
Transistor Type:
PNP
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 50mA, 500mA
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package:
4-SMD
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
500mW
Customer Reference:
Package / Case:
4-SMD, No Lead
Current - Collector Cutoff (Max):
50nA
Manufacturer:
Microsemi Corporation
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FAQs
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You can order Microsemi Corporation brand products with 2N2906AUA directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation 2N2906AUA. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation 2N2906AUA.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10245906 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10245906.
Yes. We ship 2N2906AUA Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is 2N2906AUA. It has typical 16 weeks of manufacturer standard lead time. The maximum collector current includes 600ma. It features bipolar (bjt) transistor pnp 60v 600ma 500mw surface mount 4-smd. Furthermore, 40 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in surface mount configuration. The 1.6v @ 50ma, 500ma is the maximum Vce saturation. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. 4-smd is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 500mw. Moreover, the product comes in 4-smd, no lead. In addition, 50na is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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