Microsemi Corporation JAN2N3741
Product Information
Manufacturer Standard Lead Time:
52 Weeks
Current - Collector (Ic) (Max):
4A
Detailed Description:
Bipolar (BJT) Transistor PNP 80V 4A 25W Through Hole TO-66 (TO-213AA)
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 250mA, 1V
Transistor Type:
PNP
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
600mV @ 125mA, 1A
Series:
Military, MIL-PRF-19500/441
Package / Case:
TO-213AA, TO-66-2
Supplier Device Package:
TO-66 (TO-213AA)
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
25W
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
10µA
Manufacturer:
Microsemi Corporation
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FAQs
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We accept all major payment methods for all products including ET10134066. Please check your shopping cart at the time of order.
You can order Microsemi Corporation brand products with JAN2N3741 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation JAN2N3741. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation JAN2N3741.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10134066 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10134066.
Yes. We ship JAN2N3741 Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N3741. It has typical 52 weeks of manufacturer standard lead time. The maximum collector current includes 4a. It features bipolar (bjt) transistor pnp 80v 4a 25w through hole to-66 (to-213aa). Furthermore, 30 @ 250ma, 1v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 600mv @ 125ma, 1a is the maximum Vce saturation. The product military, mil-prf-19500/441, is a highly preferred choice for users. Moreover, the product comes in to-213aa, to-66-2. to-66 (to-213aa) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 25w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 10µa is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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