Microsemi Corporation 2N3439UA
Product Information
Manufacturer Standard Lead Time:
26 Weeks
Current - Collector (Ic) (Max):
1A
Detailed Description:
Bipolar (BJT) Transistor NPN 350V 1A 800mW Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 20mA, 10V
Transistor Type:
NPN
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
500mV @ 4mA, 50mA
Voltage - Collector Emitter Breakdown (Max):
350V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
800mW
Package / Case:
4-SMD, No Lead
Current - Collector Cutoff (Max):
2µA
Manufacturer:
Microsemi Corporation
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FAQs
Yes. You can also search 2N3439UA on website for other similar products.
We accept all major payment methods for all products including ET10055182. Please check your shopping cart at the time of order.
You can order Microsemi Corporation brand products with 2N3439UA directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation 2N3439UA. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation 2N3439UA.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10055182 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10055182.
Yes. We ship 2N3439UA Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is 2N3439UA. It has typical 26 weeks of manufacturer standard lead time. The maximum collector current includes 1a. It features bipolar (bjt) transistor npn 350v 1a 800mw surface mount. Furthermore, 40 @ 20ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in surface mount configuration. The 500mv @ 4ma, 50ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 350v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 800mw. Moreover, the product comes in 4-smd, no lead. In addition, 2µa is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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