Manufacturer Standard Lead Time:
23 Weeks
Current - Collector (Ic) (Max):
30mA
Detailed Description:
Bipolar (BJT) Transistor PNP 60V 30mA 400mW Through Hole TO-46-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 5V
Transistor Type:
PNP
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
Series:
Military, MIL-PRF-19500/354
Package / Case:
TO-206AB, TO-46-3 Metal Can
Supplier Device Package:
TO-46-3
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
400mW
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
10nA
Manufacturer:
Microsemi Corporation
This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N2605. It has typical 23 weeks of manufacturer standard lead time. The maximum collector current includes 30ma. It features bipolar (bjt) transistor pnp 60v 30ma 400mw through hole to-46-3. Furthermore, 100 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 300mv @ 500µa, 10ma is the maximum Vce saturation. The product military, mil-prf-19500/354, is a highly preferred choice for users. Moreover, the product comes in to-206ab, to-46-3 metal can. to-46-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 400mw. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 10na is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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