NXP Semiconductors PDTC143ET,235

PDTC143ET-235 NXP Semiconductors PDTC143ET,235
NXP Semiconductors

Product Information

Resistor - Base (R1):
4.7 kOhms
HTSUS:
0000.00.0000
Current - Collector (Ic) (Max):
100 mA
Resistor - Emitter Base (R2):
4.7 kOhms
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Transistor Type:
NPN - Pre-Biased
Package:
Bulk
Current - Collector Cutoff (Max):
1µA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23
Power - Max:
250 mW
Base Product Number:
PDTC143
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This is manufactured by NXP Semiconductors. The manufacturer part number is PDTC143ET,235. Resistor - Base - 4.7 kohms. It is assigned with possible HTSUS value of 0000.00.0000. The maximum collector current includes 100 ma. Resistor - Emittor Base (R2) - 4.7 kohms. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 30 @ 10ma, 5v is the minimum DC current gain at given voltage. The 150mv @ 500µa, 10ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a npn - pre-biased type. It is shipped in bulk package . In addition, 1µa is the maximum current at collector cutoff. The product is available in surface mount configuration. sot-23 is the supplier device package value. The maximum power of the product is 250 mw. Moreover, it corresponds to pdtc143, a base product number of the product.

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PDTC143ET,235 Datasheet(Datasheets)

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Yes. Our products in Transistors - Bipolar (BJT) - Single, Pre-Biased category are shipped in lowest possible time.
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