NXP Semiconductors PDTC115EMB,315
Product Information
Resistor - Base (R1):
100 kOhms
HTSUS:
8541.21.0075
Current - Collector (Ic) (Max):
20 mA
Resistor - Emitter Base (R2):
100 kOhms
Package / Case:
SC-101, SOT-883
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 5V
Frequency - Transition:
230 MHz
Vce Saturation (Max) @ Ib, Ic:
150mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Transistor Type:
NPN - Pre-Biased
Package:
Bulk
Current - Collector Cutoff (Max):
1µA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN1006B-3
Power - Max:
250 mW
Base Product Number:
PDTC115
ECCN:
EAR99
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You can order NXP Semiconductors brand products with PDTC115EMB,315 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single, Pre-Biased category are shipped in lowest possible time.
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Yes. We ship PDTC115EMB,315 Internationally to many countries around the world.
This is manufactured by NXP Semiconductors. The manufacturer part number is PDTC115EMB,315. Resistor - Base - 100 kohms. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector current includes 20 ma. Resistor - Emittor Base (R2) - 100 kohms. Moreover, the product comes in sc-101, sot-883. Furthermore, 80 @ 5ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 230 mhz. The 150mv @ 250µa, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a npn - pre-biased type. It is shipped in bulk package . In addition, 1µa is the maximum current at collector cutoff. The product is available in surface mount configuration. dfn1006b-3 is the supplier device package value. The maximum power of the product is 250 mw. Moreover, it corresponds to pdtc115, a base product number of the product. The product is designated with the ear99 code number.
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