NXP Semiconductors PDTA143ZM,315
Product Information
Resistor - Base (R1):
4.7 kOhms
HTSUS:
0000.00.0000
Current - Collector (Ic) (Max):
100 mA
Resistor - Emitter Base (R2):
47 kOhms
Package / Case:
SC-101, SOT-883
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Transistor Type:
PNP - Pre-Biased
Package:
Bulk
Current - Collector Cutoff (Max):
1µA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN1006-3
Power - Max:
250 mW
Base Product Number:
PDTA143
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FAQs
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Yes. Our products in Transistors - Bipolar (BJT) - Single, Pre-Biased category are shipped in lowest possible time.
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Yes. We ship PDTA143ZM,315 Internationally to many countries around the world.
This is manufactured by NXP Semiconductors. The manufacturer part number is PDTA143ZM,315. Resistor - Base - 4.7 kohms. It is assigned with possible HTSUS value of 0000.00.0000. The maximum collector current includes 100 ma. Resistor - Emittor Base (R2) - 47 kohms. Moreover, the product comes in sc-101, sot-883. Furthermore, 100 @ 10ma, 5v is the minimum DC current gain at given voltage. The 100mv @ 250µa, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a pnp - pre-biased type. It is shipped in bulk package . In addition, 1µa is the maximum current at collector cutoff. The product is available in surface mount configuration. dfn1006-3 is the supplier device package value. The maximum power of the product is 250 mw. Moreover, it corresponds to pdta143, a base product number of the product.
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