NXP USA Inc. PDTA115EMB,315
Product Information
Resistor - Base (R1):
100 kOhms
HTSUS:
8541.21.0075
Current - Collector (Ic) (Max):
20 mA
Resistor - Emitter Base (R2):
100 kOhms
Package / Case:
SC-101, SOT-883
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 5V
Frequency - Transition:
180 MHz
Vce Saturation (Max) @ Ib, Ic:
150mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Transistor Type:
PNP - Pre-Biased
Package:
Bulk
Current - Collector Cutoff (Max):
1µA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN1006B-3
Power - Max:
250 mW
Base Product Number:
PDTA115
ECCN:
EAR99
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FAQs
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You can order NXP USA Inc. brand products with PDTA115EMB,315 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single, Pre-Biased category are shipped in lowest possible time.
You will get a confirmation email regarding your order of NXP USA Inc. PDTA115EMB,315. You can also check on our website or by contacting our customer support team for further order details on NXP USA Inc. PDTA115EMB,315.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET22561572 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "NXP USA Inc." products on our website by using Enrgtech's Unique Manufacturing Part Number ET22561572.
Yes. We ship PDTA115EMB,315 Internationally to many countries around the world.
This is manufactured by NXP USA Inc.. The manufacturer part number is PDTA115EMB,315. Resistor - Base - 100 kohms. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector current includes 20 ma. Resistor - Emittor Base (R2) - 100 kohms. Moreover, the product comes in sc-101, sot-883. Furthermore, 80 @ 5ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 180 mhz. The 150mv @ 250µa, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a pnp - pre-biased type. It is shipped in bulk package . In addition, 1µa is the maximum current at collector cutoff. The product is available in surface mount configuration. dfn1006b-3 is the supplier device package value. The maximum power of the product is 250 mw. Moreover, it corresponds to pdta115, a base product number of the product. The product is designated with the ear99 code number.
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