Infineon Technologies BCR133TE6327
Product Information
Resistor - Base (R1):
10 kOhms
HTSUS:
8541.21.0075
Current - Collector (Ic) (Max):
100 mA
Resistor - Emitter Base (R2):
10 kOhms
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 5mA, 5V
Frequency - Transition:
130 MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Transistor Type:
NPN - Pre-Biased
Package:
Bulk
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
PG-SOT23-3-11
Power - Max:
200 mW
Base Product Number:
BCR133
ECCN:
EAR99
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FAQs
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You can order Infineon Technologies brand products with BCR133TE6327 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single, Pre-Biased category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies BCR133TE6327. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies BCR133TE6327.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET22550844 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET22550844.
Yes. We ship BCR133TE6327 Internationally to many countries around the world.
This is manufactured by Infineon Technologies. The manufacturer part number is BCR133TE6327. Resistor - Base - 10 kohms. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector current includes 100 ma. Resistor - Emittor Base (R2) - 10 kohms. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 30 @ 5ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 130 mhz. The 300mv @ 500µa, 10ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a npn - pre-biased type. It is shipped in bulk package . In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. pg-sot23-3-11 is the supplier device package value. The maximum power of the product is 200 mw. Moreover, it corresponds to bcr133, a base product number of the product. The product is designated with the ear99 code number.
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