ON Semiconductor FJNS4213RTA
Product Information
Base Part Number:
FJNS42
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 300mW Through Hole TO-92S
DC Current Gain (hFE) (Min) @ Ic, Vce:
68 @ 5mA, 5V
Transistor Type:
PNP - Pre-Biased
Frequency - Transition:
200MHz
Mounting Type:
Through Hole
Resistor - Base (R1):
2.2 kOhms
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
Supplier Device Package:
TO-92S
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Tape & Box (TB)
Resistor - Emitter Base (R2):
47 kOhms
Power - Max:
300mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 Short Body
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single, Pre-Biased category are shipped in lowest possible time.
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Yes. We ship FJNS4213RTA Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FJNS4213RTA. Base Part Number: fjns42. It features pre-biased bipolar transistor (bjt) pnp - pre-biased 50v 100ma 200mhz 300mw through hole to-92s. Furthermore, 68 @ 5ma, 5v is the minimum DC current gain at given voltage. The transistor is a pnp - pre-biased type. The transition frequency of the product is 200mhz. The product is available in through hole configuration. Resistor - Base - 2.2 kohms. The 300mv @ 500µa, 10ma is the maximum Vce saturation. to-92s is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, tape & box (tb) is the available packaging type of the product. Resistor - Emittor Base (R2) - 47 kohms. The maximum power of the product is 300mw. Moreover, the product comes in to-226-3, to-92-3 short body. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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