ON Semiconductor FJN3311RBU
Product Information
Base Part Number:
FJN331
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 300mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1mA, 5V
Transistor Type:
NPN - Pre-Biased
Frequency - Transition:
250MHz
Mounting Type:
Through Hole
Resistor - Base (R1):
22 kOhms
Vce Saturation (Max) @ Ib, Ic:
300mV @ 1mA, 10mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Bulk
Power - Max:
300mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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FAQs
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You can order ON Semiconductor brand products with FJN3311RBU directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single, Pre-Biased category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor FJN3311RBU. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor FJN3311RBU.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14520855 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14520855.
Yes. We ship FJN3311RBU Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FJN3311RBU. Base Part Number: fjn331. It features pre-biased bipolar transistor (bjt) npn - pre-biased 40v 100ma 250mhz 300mw through hole to-92-3. Furthermore, 100 @ 1ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - pre-biased type. The transition frequency of the product is 250mhz. The product is available in through hole configuration. Resistor - Base - 22 kohms. The 300mv @ 1ma, 10ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, bulk is the available packaging type of the product. The maximum power of the product is 300mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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