ON Semiconductor MUN5231T1G

MUN5231T1G ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
MUN5231
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 202mW Surface Mount SC-70-3 (SOT323)
DC Current Gain (hFE) (Min) @ Ic, Vce:
8 @ 5mA, 10V
Transistor Type:
NPN - Pre-Biased
Mounting Type:
Surface Mount
Resistor - Base (R1):
2.2 kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 5mA, 10mA
Supplier Device Package:
SC-70-3 (SOT323)
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
2.2 kOhms
Power - Max:
202mW
Customer Reference:
Package / Case:
SC-70, SOT-323
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MUN5231T1G. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: mun5231. It features pre-biased bipolar transistor (bjt) npn - pre-biased 50v 100ma 202mw surface mount sc-70-3 (sot323). Furthermore, 8 @ 5ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn - pre-biased type. The product is available in surface mount configuration. Resistor - Base - 2.2 kohms. The 250mv @ 5ma, 10ma is the maximum Vce saturation. sc-70-3 (sot323) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 2.2 kohms. The maximum power of the product is 202mw. Moreover, the product comes in sc-70, sot-323. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Mult Dev 05/Dec/2019(PCN Assembly/Origin)
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Multiple Devices 30/Jun/2006(PCN Obsolescence/ EOL)
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MUN(2,5)231, MMUN2231L, DC123Exx(Datasheets)

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