Transistor Type:
PNP
Dimensions:
3.04 x 1.4 x 1.01mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
338 mW
Maximum Collector Emitter Saturation Voltage:
0.25 V dc
Maximum Collector Base Voltage:
50 V
Maximum Collector Emitter Voltage:
50 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 (Continuous) mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
52 Weeks
Base Part Number:
MMUN2111
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased + Diode 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
35 @ 5mA, 10V
Transistor Type:
PNP - Pre-Biased + Diode
Mounting Type:
Surface Mount
Resistor - Base (R1):
10 kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
10 kOhms
Power - Max:
246mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
