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This is manufactured by Nexperia USA Inc.. The manufacturer part number is PDTB123ET,215. Resistor - Base - 2.2 kohms. The maximum collector current includes 500 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50 v. Resistor - Emittor Base (R2) - 2.2 kohms. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 40 @ 50ma, 5v is the minimum DC current gain at given voltage. In addition, it is reach unaffected. The nexperia usa inc.'s product offers user-desired applications. The transistor is a pnp - pre-biased type. The 300mv @ 2.5ma, 50ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). It has a long 6 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. to-236ab is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 250 mw. Moreover, it corresponds to pdtb123, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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