Minimum DC Current Gain:
15
Transistor Type:
PNP
Dimensions:
2.9 x 1.3 x 0.94mm
Mounting Type:
Surface Mount
Maximum Continuous Collector Current:
100 mA
Maximum Collector Emitter Saturation Voltage:
0.25 V
Maximum Collector Emitter Voltage:
50 V
Height:
0.94mm
Width:
1.3mm
Length:
2.9mm
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Typical Resistor Ratio:
1
Transistor Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Typical Input Resistor:
4.7 kΩ
Manufacturer Standard Lead Time:
52 Weeks
Base Part Number:
MMUN2132
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 5mA, 10V
Transistor Type:
PNP - Pre-Biased
Mounting Type:
Surface Mount
Resistor - Base (R1):
4.7 kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 1mA, 10mA
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
4.7 kOhms
Power - Max:
246mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is MMUN2132LT1G. It features up to 15 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 2.9 x 1.3 x 0.94mm. The product is available in surface mount configuration. The product has a maximum 100 ma continuous collector current . The product has a maximum 0.25 v collector emitter saturation voltage . Whereas features a 50 v of collector emitter voltage (max). In addition, the height is 0.94mm. Furthermore, the product is 1.3mm wide. Its accurate length is 2.9mm. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. In addition, it has a typical 1 resistor ratio . The product offers single transistor configuration. It has a maximum operating temperature of +150 °c. It contains 3 pins. Whereas, it has a typical 4.7 kω input resistor . It has typical 52 weeks of manufacturer standard lead time. Base Part Number: mmun2132. It features pre-biased bipolar transistor (bjt) pnp - pre-biased 50v 100ma 246mw surface mount sot-23-3 (to-236). Furthermore, 15 @ 5ma, 10v is the minimum DC current gain at given voltage. The transistor is a pnp - pre-biased type. Resistor - Base - 4.7 kohms. The 250mv @ 1ma, 10ma is the maximum Vce saturation. sot-23-3 (to-236) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 4.7 kohms. The maximum power of the product is 246mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
Reviews
Don’t hesitate to ask questions for better clarification.