NXP Semiconductors PBSS5160PAP,115
Product Information
Current - Collector (Ic) (Max):
1A
HTSUS:
0000.00.0000
Operating Temperature:
150°C (TJ)
Package / Case:
6-UFDFN Exposed Pad
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 500mA, 2V
Frequency - Transition:
125MHz
Vce Saturation (Max) @ Ib, Ic:
340mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max):
60V
Transistor Type:
2 PNP (Dual)
Package:
Bulk
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-HUSON (2x2)
Power - Max:
510mW
Base Product Number:
PBSS5160
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FAQs
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You can order NXP Semiconductors brand products with PBSS5160PAP,115 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
You will get a confirmation email regarding your order of NXP Semiconductors PBSS5160PAP,115. You can also check on our website or by contacting our customer support team for further order details on NXP Semiconductors PBSS5160PAP,115.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET22561410 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "NXP Semiconductors" products on our website by using Enrgtech's Unique Manufacturing Part Number ET22561410.
Yes. We ship PBSS5160PAP,115 Internationally to many countries around the world.
This is manufactured by NXP Semiconductors. The manufacturer part number is PBSS5160PAP,115. The maximum collector current includes 1a. It is assigned with possible HTSUS value of 0000.00.0000. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 6-ufdfn exposed pad. Furthermore, 120 @ 500ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 125mhz. The 340mv @ 100ma, 1a is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 60v. The transistor is a 2 pnp (dual) type. It is shipped in bulk package . In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. 6-huson (2x2) is the supplier device package value. The maximum power of the product is 510mw. Moreover, it corresponds to pbss5160, a base product number of the product.
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