NXP USA Inc. PBSS4160PAN,115
Product Information
Current - Collector (Ic) (Max):
1A
HTSUS:
8541.29.0075
Operating Temperature:
150°C (TJ)
Package / Case:
6-UFDFN Exposed Pad
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 500mA, 2V
Frequency - Transition:
175MHz
Vce Saturation (Max) @ Ib, Ic:
120mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max):
60V
Transistor Type:
2 NPN (Dual)
Package:
Bulk
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-HUSON (2x2)
Power - Max:
510mW
Base Product Number:
PBSS4160
ECCN:
EAR99
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FAQs
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We accept all major payment methods for all products including ET22561389. Please check your shopping cart at the time of order.
You can order NXP USA Inc. brand products with PBSS4160PAN,115 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
You will get a confirmation email regarding your order of NXP USA Inc. PBSS4160PAN,115. You can also check on our website or by contacting our customer support team for further order details on NXP USA Inc. PBSS4160PAN,115.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET22561389 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "NXP USA Inc." products on our website by using Enrgtech's Unique Manufacturing Part Number ET22561389.
Yes. We ship PBSS4160PAN,115 Internationally to many countries around the world.
This is manufactured by NXP USA Inc.. The manufacturer part number is PBSS4160PAN,115. The maximum collector current includes 1a. It is assigned with possible HTSUS value of 8541.29.0075. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 6-ufdfn exposed pad. Furthermore, 150 @ 500ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 175mhz. The 120mv @ 50ma, 500ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 60v. The transistor is a 2 npn (dual) type. It is shipped in bulk package . In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. 6-huson (2x2) is the supplier device package value. The maximum power of the product is 510mw. Moreover, it corresponds to pbss4160, a base product number of the product. The product is designated with the ear99 code number.
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