onsemi BC856BDW1T3G Dual PNP Transistor, 100 mA, 65 V, 6-Pin SOT-363

BC856BDW1T3G onsemi  Dual PNP Transistor, 100 mA, 65 V, 6-Pin SOT-363
BC856BDW1T3G
onsemi

Product Information

Transistor Type:
PNP
Dimensions:
2.0 x 1.25 x 0.95mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
380 mW
Maximum Collector Emitter Voltage:
65 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum DC Collector Current:
100 mA
Maximum Collector Base Voltage:
-80 V
Pin Count:
6
Transistor Configuration:
Isolated
Current - Collector (Ic) (Max):
100mA
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
65V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
220 @ 2mA, 5V
Frequency - Transition:
100MHz
REACH Status:
REACH Unaffected
edacadModel:
BC856BDW1T3G Models
edacadModelUrl:
/en/models/1476060
Manufacturer:
onsemi
Transistor Type:
2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic:
650mV @ 5mA, 100mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
29 Weeks
Current - Collector Cutoff (Max):
15nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-88/SC70-6/SOT-363
Packaging:
Tape & Reel (TR)
Power - Max:
380mW
Base Product Number:
BC856
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is Dual PNP Transistor 100 mA 65 V 6-Pin SOT-363 manufactured by onsemi. The manufacturer part number is BC856BDW1T3G. The transistor is a pnp type. The given dimensions of the product include 2.0 x 1.25 x 0.95mm. The product is available in surface mount configuration. Provides up to 380 mw maximum power dissipation. Whereas features a 65 v of collector emitter voltage (max). It carries 100 mhz of maximum operating frequency. It features a -5 v of maximum emitter base voltage. The package is a sort of sot-363 (sc-88). It consists of 2 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. Additionally, it has -80 v maximum collector base voltage. It contains 6 pins. The product offers isolated transistor configuration. The maximum collector current includes 100ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 65v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. Furthermore, 220 @ 2ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. In addition, it is reach unaffected. The onsemi's product offers user-desired applications. The transistor is a 2 pnp (dual) type. The 650mv @ 5ma, 100ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). It has a long 29 weeks standard lead time. In addition, 15na (icbo) is the maximum current at collector cutoff. sc-88/sc70-6/sot-363 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 380mw. Moreover, it corresponds to bc856, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Wafer Source Addition 26/Nov/2014(PCN Assembly/Origin)
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Copper Wire 08/Jun/2009(PCN Design/Specification)
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BC85(6, 7, 8)xDW1T1 Series(Datasheets)

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