Toshiba Semiconductor and Storage HN1A01F-GR(TE85L,F
Product Information
Base Part Number:
TCR3DF
Detailed Description:
Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 80MHz 300mW Surface Mount SM6
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 6V
Transistor Type:
2 PNP (Dual)
Frequency - Transition:
80MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
300mV @ 10mA, 100mA
Series:
*
Supplier Device Package:
SM6
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
125°C (TJ)
Power - Max:
300mW
Customer Reference:
Package / Case:
SC-74, SOT-457
Current - Collector (Ic) (Max):
150mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
Toshiba Semiconductor and Storage
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Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
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Yes. We ship HN1A01F-GR(TE85L,F Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN1A01F-GR(TE85L,F. Base Part Number: tcr3df. It features bipolar (bjt) transistor array 2 pnp (dual) 50v 150ma 80mhz 300mw surface mount sm6. Furthermore, 200 @ 2ma, 6v is the minimum DC current gain at given voltage. The transistor is a 2 pnp (dual) type. The transition frequency of the product is 80mhz. The product is available in surface mount configuration. The 300mv @ 10ma, 100ma is the maximum Vce saturation. sm6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The product has 125°c (tj) operating temperature range. The maximum power of the product is 300mw. Moreover, the product comes in sc-74, sot-457. The maximum collector current includes 150ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The toshiba semiconductor and storage's product offers user-desired applications.
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