ON Semiconductor NST65010MW6T1G
Product Information
Transistor Type:
PNP
Dimensions:
2.2 x 1.35 x 1mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
380 mW
Maximum Collector Emitter Saturation Voltage:
-650 mV
Maximum Collector Base Voltage:
-80 V
Maximum Collector Emitter Voltage:
65 V
Maximum Base Emitter Saturation Voltage:
-900 mV
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum DC Collector Current:
100 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
Manufacturer Standard Lead Time:
34 Weeks
Base Part Number:
NST65010
Detailed Description:
Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88 (SOT-363)
DC Current Gain (hFE) (Min) @ Ic, Vce:
220 @ 2mA, 5V
Transistor Type:
2 PNP (Dual)
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
650mV @ 5mA, 100mA
Supplier Device Package:
SC-88 (SOT-363)
Voltage - Collector Emitter Breakdown (Max):
65V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
380mW
Customer Reference:
Package / Case:
6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
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Yes. We ship NST65010MW6T1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NST65010MW6T1G. The transistor is a pnp type. The given dimensions of the product include 2.2 x 1.35 x 1mm. The product is available in surface mount configuration. Provides up to 380 mw maximum power dissipation. The product has a maximum -650 mv collector emitter saturation voltage . Additionally, it has -80 v maximum collector base voltage. Whereas features a 65 v of collector emitter voltage (max). In addition, the product has a maximum -900 mv base emitter saturation voltage . It carries 100 mhz of maximum operating frequency. It features a -5 v of maximum emitter base voltage. The package is a sort of sot-363 (sc-88). It consists of 2 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration. It has typical 34 weeks of manufacturer standard lead time. Base Part Number: nst65010. It features bipolar (bjt) transistor array 2 pnp (dual) 65v 100ma 100mhz 380mw surface mount sc-88 (sot-363). Furthermore, 220 @ 2ma, 5v is the minimum DC current gain at given voltage. The transistor is a 2 pnp (dual) type. The transition frequency of the product is 100mhz. The 650mv @ 5ma, 100ma is the maximum Vce saturation. sc-88 (sot-363) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 65v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 380mw. Moreover, the product comes in 6-tssop, sc-88, sot-363. The maximum collector current includes 100ma. In addition, 15na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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