ON Semiconductor ULN2003ADR2G

ULN2003ADR2G ON Semiconductor
ON Semiconductor

Product Information

Minimum DC Current Gain:
1000
Transistor Type:
NPN
Dimensions:
10 x 4 x 1.5mm
Mounting Type:
Surface Mount
Maximum Continuous Collector Current:
500 mA
Maximum Operating Temperature:
+85 °C
Maximum Collector Emitter Voltage:
50 V
Maximum Collector Cut-off Current:
50µA
Height:
1.5mm
Width:
4mm
Length:
10mm
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Operating Temperature:
-20 °C
Maximum Collector Emitter Saturation Voltage:
1.1 V dc
Configuration:
Single
Base Current:
25mA
Pin Count:
16
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
24 Weeks
Base Part Number:
ULN2003
Detailed Description:
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC
Transistor Type:
7 NPN Darlington
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 500µA, 350mA
Supplier Device Package:
16-SOIC
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
-20°C ~ 85°C (TA)
Current - Collector Cutoff (Max):
50µA
Customer Reference:
Package / Case:
16-SOIC (0.154", 3.90mm Width)
Current - Collector (Ic) (Max):
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 350mA, 2V
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is ULN2003ADR2G. It features up to 1000 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 10 x 4 x 1.5mm. The product is available in surface mount configuration. The product has a maximum 500 ma continuous collector current . It has a maximum operating temperature of +85 °c. Whereas features a 50 v of collector emitter voltage (max). It has a maximum 50µa collector cut-off current . In addition, the height is 1.5mm. Furthermore, the product is 4mm wide. Its accurate length is 10mm. The package is a sort of soic. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -20 °c. The product has a maximum 1.1 v dc collector emitter saturation voltage . The product is available in single configuration. With 25ma of base current . It contains 16 pins. The product offers single transistor configuration. It has typical 24 weeks of manufacturer standard lead time. Base Part Number: uln2003. It features bipolar (bjt) transistor array 7 npn darlington 50v 500ma surface mount 16-soic. The transistor is a 7 npn darlington type. The 1.6v @ 500µa, 350ma is the maximum Vce saturation. 16-soic is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The product has -20°c ~ 85°c (ta) operating temperature range. In addition, 50µa is the maximum current at collector cutoff. Moreover, the product comes in 16-soic (0.154", 3.90mm width). The maximum collector current includes 500ma. Furthermore, 1000 @ 350ma, 2v is the minimum DC current gain at given voltage. The on semiconductor's product offers user-desired applications.

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Datasheet ULN2003ADR2G(Technical Reference)
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Mult Dev Wafer Chgs 29/Oct/2020(PCN Assembly/Origin)
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ULN2003A, ULQ2003A(Datasheets)

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FAQs

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