ON Semiconductor MBT2222ADW1T1G
Product Information
Transistor Type:
NPN
Dimensions:
2.2 x 1.35 x 1mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
150 mW
Maximum Collector Emitter Saturation Voltage:
1 V
Maximum Collector Base Voltage:
75 V
Maximum Collector Emitter Voltage:
40 V
Maximum Base Emitter Saturation Voltage:
2 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum DC Collector Current:
600 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
Manufacturer Standard Lead Time:
12 Weeks
Base Part Number:
MBT2222
Detailed Description:
Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 600mA 300MHz 150mW Surface Mount SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Transistor Type:
2 NPN (Dual)
Frequency - Transition:
300MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Supplier Device Package:
SC-88/SC70-6/SOT-363
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
150mW
Customer Reference:
Package / Case:
6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max):
600mA
Current - Collector Cutoff (Max):
10nA (ICBO)
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
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Yes. We ship MBT2222ADW1T1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is MBT2222ADW1T1G. The transistor is a npn type. The given dimensions of the product include 2.2 x 1.35 x 1mm. The product is available in surface mount configuration. Provides up to 150 mw maximum power dissipation. The product has a maximum 1 v collector emitter saturation voltage . Additionally, it has 75 v maximum collector base voltage. Whereas features a 40 v of collector emitter voltage (max). In addition, the product has a maximum 2 v base emitter saturation voltage . It carries 100 mhz of maximum operating frequency. It features a 6 v of maximum emitter base voltage. The package is a sort of sot-363 (sc-88). It consists of 2 elements per chip. Moreover, it has a maximum DC collector current of 600 ma. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration. It has typical 12 weeks of manufacturer standard lead time. Base Part Number: mbt2222. It features bipolar (bjt) transistor array 2 npn (dual) 40v 600ma 300mhz 150mw surface mount sc-88/sc70-6/sot-363. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a 2 npn (dual) type. The transition frequency of the product is 300mhz. The 1v @ 50ma, 500ma is the maximum Vce saturation. sc-88/sc70-6/sot-363 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 150mw. Moreover, the product comes in 6-tssop, sc-88, sot-363. The maximum collector current includes 600ma. In addition, 10na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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