This is manufactured by ON Semiconductor. The manufacturer part number is NSS60101DMTTBG. It has typical 16 weeks of manufacturer standard lead time. Base Part Number: nss60101. It features bipolar (bjt) transistor array 2 npn (dual) 60v 1a 180mhz 2.27w surface mount 6-wdfn (2x2). Furthermore, 120 @ 500ma, 2v is the minimum DC current gain at given voltage. The transistor is a 2 npn (dual) type. The transition frequency of the product is 180mhz. The product is available in surface mount configuration. The 180mv @ 100ma, 1a is the maximum Vce saturation. 6-wdfn (2x2) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 2.27w. Moreover, the product comes in 6-wdfn exposed pad. The maximum collector current includes 1a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
NSS60101DMT(Datasheets)
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Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
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Yes. We ship NSS60101DMTTBG Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NSS60101DMTTBG. It has typical 16 weeks of manufacturer standard lead time. Base Part Number: nss60101. It features bipolar (bjt) transistor array 2 npn (dual) 60v 1a 180mhz 2.27w surface mount 6-wdfn (2x2). Furthermore, 120 @ 500ma, 2v is the minimum DC current gain at given voltage. The transistor is a 2 npn (dual) type. The transition frequency of the product is 180mhz. The product is available in surface mount configuration. The 180mv @ 100ma, 1a is the maximum Vce saturation. 6-wdfn (2x2) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 2.27w. Moreover, the product comes in 6-wdfn exposed pad. The maximum collector current includes 1a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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Don’t hesitate to ask questions for better clarification.