ON Semiconductor EMX1DXV6T1G
Product Information
Minimum DC Current Gain:
120
Transistor Type:
NPN
Dimensions:
1.7 x 1.3 x 0.6mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
357 mW
Maximum Collector Emitter Saturation Voltage:
0.4 V dc
Maximum Collector Base Voltage:
60 V dc
Maximum Collector Emitter Voltage:
50 V
Maximum Operating Frequency:
180 MHz
Height:
0.6mm
Width:
1.3mm
Length:
1.7mm
Package Type:
SOT-563
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum DC Collector Current:
100 mA
Maximum Emitter Base Voltage:
7 V
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
Base Part Number:
EMX1DXV6
Detailed Description:
Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 100mA 180MHz 500mW Surface Mount SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 6V
Transistor Type:
2 NPN (Dual)
Frequency - Transition:
180MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
400mV @ 5mA, 50mA
Supplier Device Package:
SOT-563
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
500mW
Customer Reference:
Package / Case:
SOT-563, SOT-666
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA (ICBO)
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET11267724 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11267724.
Yes. We ship EMX1DXV6T1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is EMX1DXV6T1G. It features up to 120 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 1.7 x 1.3 x 0.6mm. The product is available in surface mount configuration. Provides up to 357 mw maximum power dissipation. The product has a maximum 0.4 v dc collector emitter saturation voltage . Additionally, it has 60 v dc maximum collector base voltage. Whereas features a 50 v of collector emitter voltage (max). It carries 180 mhz of maximum operating frequency. In addition, the height is 0.6mm. Furthermore, the product is 1.3mm wide. Its accurate length is 1.7mm. The package is a sort of sot-563. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. Moreover, it has a maximum DC collector current of 100 ma. It features a 7 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers single transistor configuration. Base Part Number: emx1dxv6. It features bipolar (bjt) transistor array 2 npn (dual) 50v 100ma 180mhz 500mw surface mount sot-563. Furthermore, 120 @ 1ma, 6v is the minimum DC current gain at given voltage. The transistor is a 2 npn (dual) type. The transition frequency of the product is 180mhz. The 400mv @ 5ma, 50ma is the maximum Vce saturation. sot-563 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 500mw. Moreover, the product comes in sot-563, sot-666. The maximum collector current includes 100ma. In addition, 500na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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