ON Semiconductor BC848CPDW1T1G
Product Information
Transistor Type:
NPN + PNP
Dimensions:
2.2 x 1.35 x 1mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
380 mW
Maximum Collector Emitter Saturation Voltage:
0.6 V
Maximum Collector Base Voltage:
-30 (PNP) V, 30 (NPN) V
Maximum Collector Emitter Voltage:
-30 (PNP) V, 30 (NPN) V
Maximum Base Emitter Saturation Voltage:
0.9 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
-6 (PNP) V, 6 (NPN) V
Package Type:
SOT-363
Number of Elements per Chip:
2
Maximum DC Collector Current:
100 ((Continuous) NPN) mA, 200 ((Peak) PNP) mA
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Manufacturer Standard Lead Time:
12 Weeks
Base Part Number:
BC848
Detailed Description:
Bipolar (BJT) Transistor Array NPN, PNP 30V 100mA 100MHz 250mW Surface Mount SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
420 @ 2mA, 5V
Transistor Type:
NPN, PNP
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
600mV @ 5mA, 100mA
Supplier Device Package:
SC-88/SC70-6/SOT-363
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
250mW
Customer Reference:
Package / Case:
6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
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Yes. We ship BC848CPDW1T1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is BC848CPDW1T1G. The transistor is a npn + pnp type. The given dimensions of the product include 2.2 x 1.35 x 1mm. The product is available in surface mount configuration. Provides up to 380 mw maximum power dissipation. The product has a maximum 0.6 v collector emitter saturation voltage . Additionally, it has -30 (pnp) v, 30 (npn) v maximum collector base voltage. Whereas features a -30 (pnp) v, 30 (npn) v of collector emitter voltage (max). In addition, the product has a maximum 0.9 v base emitter saturation voltage . It carries 100 mhz of maximum operating frequency. It features a -6 (pnp) v, 6 (npn) v of maximum emitter base voltage. The package is a sort of sot-363. It consists of 2 elements per chip. Moreover, it has a maximum DC collector current of 100 ((continuous) npn) ma, 200 ((peak) pnp) ma. It has a maximum operating temperature of +150 °c. It contains 6 pins. It has typical 12 weeks of manufacturer standard lead time. Base Part Number: bc848. It features bipolar (bjt) transistor array npn, pnp 30v 100ma 100mhz 250mw surface mount sc-88/sc70-6/sot-363. Furthermore, 420 @ 2ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn, pnp type. The transition frequency of the product is 100mhz. The 600mv @ 5ma, 100ma is the maximum Vce saturation. sc-88/sc70-6/sot-363 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 250mw. Moreover, the product comes in 6-tssop, sc-88, sot-363. The maximum collector current includes 100ma. In addition, 15na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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