Minimum DC Current Gain:
120
Transistor Type:
PNP
Dimensions:
1.7 x 1.3 x 0.6mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
357 mW
Maximum Collector Emitter Saturation Voltage:
-0.5 V dc
Maximum Collector Base Voltage:
-50 V
Maximum Collector Emitter Voltage:
60 V
Maximum Operating Frequency:
140 MHz
Height:
0.6mm
Width:
1.3mm
Length:
1.7mm
Package Type:
SOT-563
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum DC Collector Current:
100 mA
Maximum Emitter Base Voltage:
-6 V
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
EMT1DXV6
Detailed Description:
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 100mA 140MHz 500mW Surface Mount SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 6V
Transistor Type:
2 PNP (Dual)
Frequency - Transition:
140MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
500mV @ 5mA, 50mA
Supplier Device Package:
SOT-563
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
500mW
Customer Reference:
Package / Case:
SOT-563, SOT-666
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA (ICBO)
Manufacturer:
ON Semiconductor
