Microsemi Corporation 2N5795
Product Information
Manufacturer Standard Lead Time:
30 Weeks
Current - Collector (Ic) (Max):
600mA
Detailed Description:
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 600mA 600mW Through Hole TO-78-6
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 150mA, 10V
Transistor Type:
2 PNP (Dual)
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 50mA, 500mA
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package:
TO-78-6
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 175°C (TJ)
Power - Max:
600mW
Customer Reference:
Package / Case:
TO-78-6 Metal Can
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
Microsemi Corporation
Checking for live stock
FAQs
Yes. You can also search 2N5795 on website for other similar products.
We accept all major payment methods for all products including ET10558199. Please check your shopping cart at the time of order.
You can order Microsemi Corporation brand products with 2N5795 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation 2N5795. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation 2N5795.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10558199 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10558199.
Yes. We ship 2N5795 Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is 2N5795. It has typical 30 weeks of manufacturer standard lead time. The maximum collector current includes 600ma. It features bipolar (bjt) transistor array 2 pnp (dual) 60v 600ma 600mw through hole to-78-6. Furthermore, 40 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a 2 pnp (dual) type. The product is available in through hole configuration. The 1.6v @ 50ma, 500ma is the maximum Vce saturation. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. to-78-6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 175°c (tj) operating temperature range. The maximum power of the product is 600mw. Moreover, the product comes in to-78-6 metal can. In addition, 10µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
Reviews
Don’t hesitate to ask questions for better clarification.