Microsemi Corporation 2N2060L
Product Information
Manufacturer Standard Lead Time:
30 Weeks
Current - Collector (Ic) (Max):
500mA
Detailed Description:
Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 500mA 2.12W Through Hole TO-78-6
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 5V
Transistor Type:
2 NPN (Dual)
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
300mV @ 5mA, 50mA
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package:
TO-78-6
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
2.12W
Customer Reference:
Package / Case:
TO-78-6 Metal Can
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
Microsemi Corporation
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FAQs
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You can order Microsemi Corporation brand products with 2N2060L directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation 2N2060L. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation 2N2060L.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10466727 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10466727.
Yes. We ship 2N2060L Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is 2N2060L. It has typical 30 weeks of manufacturer standard lead time. The maximum collector current includes 500ma. It features bipolar (bjt) transistor array 2 npn (dual) 60v 500ma 2.12w through hole to-78-6. Furthermore, 50 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a 2 npn (dual) type. The product is available in through hole configuration. The 300mv @ 5ma, 50ma is the maximum Vce saturation. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. to-78-6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 2.12w. Moreover, the product comes in to-78-6 metal can. In addition, 10µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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