Microsemi Corporation 2N3810U
Product Information
Manufacturer Standard Lead Time:
16 Weeks
Current - Collector (Ic) (Max):
50mA
Detailed Description:
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 1mA, 5V
Transistor Type:
2 PNP (Dual)
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
250mV @ 100µA, 1mA
Supplier Device Package:
TO-78-6
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
350mW
Customer Reference:
Package / Case:
TO-78-6 Metal Can
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
Microsemi Corporation
Checking for live stock
FAQs
Yes. You can also search 2N3810U on website for other similar products.
We accept all major payment methods for all products including ET10432670. Please check your shopping cart at the time of order.
You can order Microsemi Corporation brand products with 2N3810U directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation 2N3810U. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation 2N3810U.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10432670 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10432670.
Yes. We ship 2N3810U Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is 2N3810U. It has typical 16 weeks of manufacturer standard lead time. The maximum collector current includes 50ma. It features bipolar (bjt) transistor array 2 pnp (dual) 60v 50ma 350mw through hole to-78-6. Furthermore, 150 @ 1ma, 5v is the minimum DC current gain at given voltage. The transistor is a 2 pnp (dual) type. The product is available in through hole configuration. The 250mv @ 100µa, 1ma is the maximum Vce saturation. to-78-6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 350mw. Moreover, the product comes in to-78-6 metal can. In addition, 10µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
Reviews
Don’t hesitate to ask questions for better clarification.