Microsemi Corporation 2N2919U
Product Information
Manufacturer Standard Lead Time:
30 Weeks
Current - Collector (Ic) (Max):
30mA
Detailed Description:
Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30mA 350mW Surface Mount 3-SMD
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 1mA, 5V
Transistor Type:
2 NPN (Dual)
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
300mV @ 100µA, 1mA
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package:
3-SMD
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Operating Temperature:
200°C (TJ)
Power - Max:
350mW
Customer Reference:
Package / Case:
3-SMD, No Lead
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
Microsemi Corporation
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FAQs
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We accept all major payment methods for all products including ET10332944. Please check your shopping cart at the time of order.
You can order Microsemi Corporation brand products with 2N2919U directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation 2N2919U. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation 2N2919U.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10332944 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10332944.
Yes. We ship 2N2919U Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is 2N2919U. It has typical 30 weeks of manufacturer standard lead time. The maximum collector current includes 30ma. It features bipolar (bjt) transistor array 2 npn (dual) 60v 30ma 350mw surface mount 3-smd. Furthermore, 150 @ 1ma, 5v is the minimum DC current gain at given voltage. The transistor is a 2 npn (dual) type. The product is available in surface mount configuration. The 300mv @ 100µa, 1ma is the maximum Vce saturation. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. 3-smd is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has 200°c (tj) operating temperature range. The maximum power of the product is 350mw. Moreover, the product comes in 3-smd, no lead. In addition, 10µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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