Microsemi Corporation JAN2N6989
Product Information
Manufacturer Standard Lead Time:
30 Weeks
Current - Collector (Ic) (Max):
800mA
Detailed Description:
Bipolar (BJT) Transistor Array 4 NPN (Quad) 50V 800mA 1.5W Through Hole TO-116
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Transistor Type:
4 NPN (Quad)
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Series:
Military, MIL-PRF-19500/559
Package / Case:
14-DIP (0.300", 7.62mm)
Supplier Device Package:
TO-116
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
1.5W
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
Microsemi Corporation
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FAQs
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We accept all major payment methods for all products including ET10190946. Please check your shopping cart at the time of order.
You can order Microsemi Corporation brand products with JAN2N6989 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation JAN2N6989. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation JAN2N6989.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10190946 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10190946.
Yes. We ship JAN2N6989 Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N6989. It has typical 30 weeks of manufacturer standard lead time. The maximum collector current includes 800ma. It features bipolar (bjt) transistor array 4 npn (quad) 50v 800ma 1.5w through hole to-116. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a 4 npn (quad) type. The product is available in through hole configuration. The 1v @ 50ma, 500ma is the maximum Vce saturation. The product military, mil-prf-19500/559, is a highly preferred choice for users. Moreover, the product comes in 14-dip (0.300", 7.62mm). to-116 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 1.5w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 10µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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