Resistor - Base (R1):
4.7kOhms, 22kOhms
HTSUS:
0000.00.0000
Current - Collector (Ic) (Max):
100mA
Resistor - Emitter Base (R2):
47kOhms
Package / Case:
SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 5V / 100 @ 10mA, 5V
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA / 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
50V
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Package:
Bulk
Current - Collector Cutoff (Max):
1µA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-666
Power - Max:
300mW
Base Product Number:
PEMD48
This is manufactured by NXP USA Inc.. The manufacturer part number is PEMD48,115. Resistor - Base - 4.7kohms, 22kohms. It is assigned with possible HTSUS value of 0000.00.0000. The maximum collector current includes 100ma. Resistor - Emittor Base (R2) - 47kohms. Moreover, the product comes in sot-563, sot-666. Furthermore, 80 @ 5ma, 5v / 100 @ 10ma, 5v is the minimum DC current gain at given voltage. The 150mv @ 500µa, 10ma / 100mv @ 250µa, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50v. The transistor is a 1 npn, 1 pnp - pre-biased (dual) type. It is shipped in bulk package . In addition, 1µa is the maximum current at collector cutoff. The product is available in surface mount configuration. sot-666 is the supplier device package value. The maximum power of the product is 300mw. Moreover, it corresponds to pemd48, a base product number of the product.
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