Resistor - Base (R1):
4.7kOhms, 10kOhms
HTSUS:
8541.21.0095
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Emitter Base (R2):
4.7kOhms, 10kOhms
Package / Case:
6-TSSOP, SC-88, SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
35 @ 5mA, 10V / 15 @ 5mA, 10V
Frequency - Transition:
-
REACH Status:
REACH Unaffected
edacadModel:
NSB13211DW6T1G Models
edacadModelUrl:
/en/models/1961227
Manufacturer:
onsemi
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA / 250mV @ 1mA, 10mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-88/SC70-6/SOT-363
Packaging:
Tape & Reel (TR)
Power - Max:
230mW
Base Product Number:
NSB132
ECCN:
EAR99
This is manufactured by onsemi. The manufacturer part number is NSB13211DW6T1G. Resistor - Base - 4.7kohms, 10kohms. It is assigned with possible HTSUS value of 8541.21.0095. The maximum collector current includes 100ma. The maximum collector emitter breakdown voltage of the product is 50v. Resistor - Emittor Base (R2) - 4.7kohms, 10kohms. Moreover, the product comes in 6-tssop, sc-88, sot-363. Furthermore, 35 @ 5ma, 10v / 15 @ 5ma, 10v is the minimum DC current gain at given voltage. In addition, it is reach unaffected. The onsemi's product offers user-desired applications. The transistor is a 1 npn, 1 pnp - pre-biased (dual) type. The 250mv @ 300µa, 10ma / 250mv @ 1ma, 10ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. sc-88/sc70-6/sot-363 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 230mw. Moreover, it corresponds to nsb132, a base product number of the product. The product is designated with the ear99 code number.
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