Toshiba Semiconductor and Storage RN1971FE(TE85L,F)
Product Information
Base Part Number:
TLP3120
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
Transistor Type:
2 NPN - Pre-Biased (Dual)
Frequency - Transition:
250MHz
Mounting Type:
Surface Mount
Resistor - Base (R1):
10kOhms
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Supplier Device Package:
ES6
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Power - Max:
100mW
Customer Reference:
Package / Case:
SOT-563, SOT-666
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
Toshiba Semiconductor and Storage
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Yes. Our products in Bipolar Transistor Arrays, Pre-Biased category are shipped in lowest possible time.
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Yes. We ship RN1971FE(TE85L,F) Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1971FE(TE85L,F). Base Part Number: tlp3120. It features pre-biased bipolar transistor (bjt) 2 npn - pre-biased (dual) 50v 100ma 250mhz 100mw surface mount es6. Furthermore, 120 @ 1ma, 5v is the minimum DC current gain at given voltage. The transistor is a 2 npn - pre-biased (dual) type. The transition frequency of the product is 250mhz. The product is available in surface mount configuration. Resistor - Base - 10kohms. The 300mv @ 250µa, 5ma is the maximum Vce saturation. es6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 100mw. Moreover, the product comes in sot-563, sot-666. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The toshiba semiconductor and storage's product offers user-desired applications.
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