Toshiba Semiconductor and Storage RN4983FE,LF(CB

Enrgtech Part No: ET11809017
|
Manufacturer Part No:
RN4983FE,LF(CB
|
Manufacturer: Toshiba Semiconductor and Storage

RN4983FE-LF-CB Toshiba Semiconductor and Storage RN4983FE,LF(CB

Product Information

Manufacturer Standard Lead Time:

16 Weeks

Resistor - Base (R1):

22 kOhms

Detailed Description:

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

Current - Collector (Ic) (Max):

100mA

Resistor - Emitter Base (R2):

22 kOhms

Package / Case:

SOT-563, SOT-666

DC Current Gain (hFE) (Min) @ Ic, Vce:

70 @ 10mA, 5V

Frequency - Transition:

250MHz

Voltage - Collector Emitter Breakdown (Max):

50V

Standard Package:

Manufacturer:

Toshiba Semiconductor and Storage

Transistor Type:

1 NPN, 1 PNP - Pre-Biased (Dual)

Checking for live stock

More Information
Rating & Review

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN4983FE,LF(CB. It has typical 16 weeks of manufacturer standard lead time. Resistor - Base - 22 kohms. It features pre-biased bipolar transistor (bjt) 1 npn, 1 pnp - pre-biased (dual) 50v 100ma 250mhz 100mw surface mount es6. The maximum collector current includes 100ma. Resistor - Emittor Base (R2) - 22 kohms. Moreover, the product comes in sot-563, sot-666. Furthermore, 70 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 250mhz. The maximum collector emitter breakdown voltage of the product is 50v. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a 1 npn, 1 pnp - pre-biased (dual) type. The 300mv @ 250µa, 5ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. es6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 100mw. Alternative Names include rn4983fe(t5lft)ct rn4983fe(t5lft)ct-nd rn4983felf(cbct rn4983felf(ctct rn4983felf(ctct-nd.

Your Rating

Reviews

Be the first to review.

FAQs

Yes. You can also search RN4983FE,LF(CB on website for other similar products.

We accept all major payment methods for all products including ET11809017. Please check your shopping cart at the time of order.

You can order Toshiba Semiconductor and Storage brand products with RN4983FE,LF(CB directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

Yes. Our products in Transistors - Bipolar (BJT) - Arrays, Pre-Biased category are shipped in lowest possible time.

You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage RN4983FE,LF(CB. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage RN4983FE,LF(CB.

We use our internationally recognized delivery partners UPS/DHL. Collection of ET11809017 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11809017.

Yes. We ship RN4983FE,LF(CB Internationally to many countries around the world.

Toshiba Semiconductor and Storage RN4983FE,LF(CB

RN4983FE,LF(CB

Product Information

Reviews

Related products

FAQs