Base Part Number:
*MF5
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 12V 100mA, 500mA 250MHz, 260MHz 150mW Surface Mount UMT6
DC Current Gain (hFE) (Min) @ Ic, Vce:
68 @ 5mA, 5V / 270 @ 10mA, 2V
Transistor Type:
1 NPN Pre-Biased, 1 PNP
Frequency - Transition:
250MHz, 260MHz
Mounting Type:
Surface Mount
Resistor - Base (R1):
47kOhms
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Supplier Device Package:
UMT6
Voltage - Collector Emitter Breakdown (Max):
50V, 12V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
47kOhms
Power - Max:
150mW
Customer Reference:
Package / Case:
6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max):
100mA, 500mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
Rohm Semiconductor