Toshiba Semiconductor and Storage RN2907FE,LF(CB
Product Information
Resistor - Base (R1):
10 kOhms
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Transistor Type:
2 PNP - Pre-Biased (Dual)
Frequency - Transition:
200MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Standard Package:
1
Supplier Device Package:
ES6
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
47 kOhms
Power - Max:
100mW
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
SOT-563, SOT-666
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Other Names:
RN2907FE(T5LFT)CT
RN2907FE(T5LFT)CT-ND
RN2907FELF(CBCT
RN2907FELF(CTCT
RN2907FELF(CTCT-ND
Manufacturer:
Toshiba Semiconductor and Storage
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Yes. Our products in Transistors - Bipolar (BJT) - Arrays, Pre-Biased category are shipped in lowest possible time.
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Yes. We ship RN2907FE,LF(CB Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2907FE,LF(CB. Resistor - Base - 10 kohms. It features pre-biased bipolar transistor (bjt) 2 pnp - pre-biased (dual) 50v 100ma 200mhz 100mw surface mount es6. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a 2 pnp - pre-biased (dual) type. The transition frequency of the product is 200mhz. The product is available in surface mount configuration. The 300mv @ 250µa, 5ma is the maximum Vce saturation. It is available in the standard package of 1. es6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 47 kohms. The maximum power of the product is 100mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in sot-563, sot-666. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. Alternative Names include rn2907fe(t5lft)ct rn2907fe(t5lft)ct-nd rn2907felf(cbct rn2907felf(ctct rn2907felf(ctct-nd. The toshiba semiconductor and storage's product offers user-desired applications.
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