ON Semiconductor NSB1706DMW5T1G

NSB1706DMW5T1G ON Semiconductor
NSB1706DMW5T1G
ON Semiconductor

Product Information

Transistor Type:
NPN
Dimensions:
2.2 x 1.35 x 1mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
385 mW
Maximum Collector Emitter Saturation Voltage:
0.25 V dc
Maximum Collector Base Voltage:
50 V dc
Maximum Collector Emitter Voltage:
50 V
Maximum Emitter Base Voltage:
6 V
Package Type:
SOT-353 (SC-88A)
Number of Elements per Chip:
2
Maximum DC Collector Current:
100 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
5
Transistor Configuration:
Common Emitter
Manufacturer Standard Lead Time:
37 Weeks
Base Part Number:
NSB1706
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88A (SC-70-5/SOT-353)
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 10V
Transistor Type:
2 NPN - Pre-Biased (Dual)
Mounting Type:
Surface Mount
Resistor - Base (R1):
4.7kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 1mA, 10mA
Supplier Device Package:
SC-88A (SC-70-5/SOT-353)
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
47kOhms
Power - Max:
250mW
Customer Reference:
Package / Case:
5-TSSOP, SC-70-5, SOT-353
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is NSB1706DMW5T1G. The transistor is a npn type. The given dimensions of the product include 2.2 x 1.35 x 1mm. The product is available in surface mount configuration. Provides up to 385 mw maximum power dissipation. The product has a maximum 0.25 v dc collector emitter saturation voltage . Additionally, it has 50 v dc maximum collector base voltage. Whereas features a 50 v of collector emitter voltage (max). It features a 6 v of maximum emitter base voltage. The package is a sort of sot-353 (sc-88a). It consists of 2 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. It has a maximum operating temperature of +150 °c. It contains 5 pins. The product offers common emitter transistor configuration. It has typical 37 weeks of manufacturer standard lead time. Base Part Number: nsb1706. It features pre-biased bipolar transistor (bjt) 2 npn - pre-biased (dual) 50v 100ma 250mw surface mount sc-88a (sc-70-5/sot-353). Furthermore, 80 @ 5ma, 10v is the minimum DC current gain at given voltage. The transistor is a 2 npn - pre-biased (dual) type. Resistor - Base - 4.7kohms. The 250mv @ 1ma, 10ma is the maximum Vce saturation. sc-88a (sc-70-5/sot-353) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 47kohms. The maximum power of the product is 250mw. Moreover, the product comes in 5-tssop, sc-70-5, sot-353. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Trans Wire Qual 19/Dec/2017(PCN Assembly/Origin)
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NSB1706DMW5T1(Datasheets)
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Copper Wire 08/Jun/2009(PCN Design/Specification)

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