Toshiba Semiconductor and Storage RN4990FE,LF(CB

RN4990FE-LF-CB Toshiba Semiconductor and Storage RN4990FE,LF(CB
Toshiba Semiconductor and Storage

Product Information

Resistor - Base (R1):
4.7 kOhms
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Frequency - Transition:
250MHz, 200MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Standard Package:
1
Supplier Device Package:
ES6
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Power - Max:
100mW
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
SOT-563, SOT-666
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Other Names:
RN4990FE(T5LFT)CT RN4990FE(T5LFT)CT-ND RN4990FELF(CBCT RN4990FELF(CTCT RN4990FELF(CTCT-ND
Manufacturer:
Toshiba Semiconductor and Storage
RoHs Compliant
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN4990FE,LF(CB. Resistor - Base - 4.7 kohms. It features pre-biased bipolar transistor (bjt) 1 npn, 1 pnp - pre-biased (dual) 50v 100ma 250mhz, 200mhz 100mw surface mount es6. Furthermore, 120 @ 1ma, 5v is the minimum DC current gain at given voltage. The transistor is a 1 npn, 1 pnp - pre-biased (dual) type. The transition frequency of the product is 250mhz, 200mhz. The product is available in surface mount configuration. The 300mv @ 250µa, 5ma is the maximum Vce saturation. It is available in the standard package of 1. es6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 100mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in sot-563, sot-666. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. Alternative Names include rn4990fe(t5lft)ct rn4990fe(t5lft)ct-nd rn4990felf(cbct rn4990felf(ctct rn4990felf(ctct-nd. The toshiba semiconductor and storage's product offers user-desired applications.

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FAQs

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You can order Toshiba Semiconductor and Storage brand products with RN4990FE,LF(CB directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Arrays, Pre-Biased category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage RN4990FE,LF(CB. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage RN4990FE,LF(CB.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10869417 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10869417.
Yes. We ship RN4990FE,LF(CB Internationally to many countries around the world.