Nexperia USA Inc. PSMN5R3-25MLD,115
Product Information
FET Feature:
Schottky Diode (Body)
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.2V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SOT-1210, 8-LFPAK33 (5-Lead)
Gate Charge (Qg) (Max) @ Vgs:
12.7 nC @ 10 V
Rds On (Max) @ Id, Vgs:
5.9mOhm @ 15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
25 V
Vgs (Max):
±20V
Power Dissipation (Max):
51W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
858 pF @ 12 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
LFPAK33
Current - Continuous Drain (Id) @ 25°C:
70A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Nexperia USA Inc.. The manufacturer part number is PSMN5R3-25MLD,115. The FET features of the product include schottky diode (body). It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.2v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sot-1210, 8-lfpak33 (5-lead). The maximum gate charge and given voltages include 12.7 nc @ 10 v. It has a maximum Rds On and voltage of 5.9mohm @ 15a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 25 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 51w (ta). The product's input capacitance at maximum includes 858 pf @ 12 v. The product is available in surface mount configuration. lfpak33 is the supplier device package value. The continuous current drain at 25°C is 70a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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