NXP USA Inc. PDTC143EMB315
Product Information
Resistor - Base (R1):
4.7 kOhms
HTSUS:
8541.21.0075
Current - Collector (Ic) (Max):
100 mA
Resistor - Emitter Base (R2):
4.7 kOhms
Package / Case:
SC-101, SOT-883
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 10mA, 5V
Frequency - Transition:
230 MHz
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Transistor Type:
NPN - Pre-Biased
Package:
Bulk
Qualification:
AEC-Q101
Current - Collector Cutoff (Max):
1µA
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
DFN1006B-3
Power - Max:
250 mW
ECCN:
EAR99
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FAQs
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Yes. We ship PDTC143EMB315 Internationally to many countries around the world.
This is manufactured by NXP USA Inc.. The manufacturer part number is PDTC143EMB315. Resistor - Base - 4.7 kohms. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector current includes 100 ma. Resistor - Emittor Base (R2) - 4.7 kohms. Moreover, the product comes in sc-101, sot-883. Furthermore, 30 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 230 mhz. The 150mv @ 500µa, 10ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a npn - pre-biased type. It is shipped in bulk package . In addition, 1µa is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. dfn1006b-3 is the supplier device package value. The maximum power of the product is 250 mw. The product is designated with the ear99 code number.
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