NXP Semiconductors PDTC114ET215
Product Information
Resistor - Base (R1):
10 kOhms
Current - Collector (Ic) (Max):
100 mA
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Emitter Base (R2):
10 kOhms
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 5mA, 5V
Frequency - Transition:
230 MHz
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
REACH Status:
REACH Unaffected
Transistor Type:
NPN - Pre-Biased
Package:
Bulk
Current - Collector Cutoff (Max):
1µA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT23-3 (TO-236)
Power - Max:
250 mW
ECCN:
EAR99
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Yes. We ship PDTC114ET215 Internationally to many countries around the world.
This is manufactured by NXP Semiconductors. The manufacturer part number is PDTC114ET215. Resistor - Base - 10 kohms. The maximum collector current includes 100 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50 v. Resistor - Emittor Base (R2) - 10 kohms. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 30 @ 5ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 230 mhz. The 150mv @ 500µa, 10ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn - pre-biased type. It is shipped in bulk package . In addition, 1µa is the maximum current at collector cutoff. The product is available in surface mount configuration. sot23-3 (to-236) is the supplier device package value. The maximum power of the product is 250 mw. The product is designated with the ear99 code number.
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