NXP USA Inc. NX7002BKS115
Product Information
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Gate Charge (Qg) (Max) @ Vgs:
1nC @ 10V
Rds On (Max) @ Id, Vgs:
2.8Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C:
330mA (Tc)
Configuration:
2 N-Channel
Package:
Bulk
Drain to Source Voltage (Vdss):
60V
Input Capacitance (Ciss) (Max) @ Vds:
23.6pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-TSSOP
Power - Max:
285mW (Ta), 870mW (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is NX7002BKS115. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 2.1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. The maximum gate charge and given voltages include 1nc @ 10v. It has a maximum Rds On and voltage of 2.8ohm @ 200ma, 10v. The continuous current drain at 25°C is 330ma (tc). The product is available in 2 n-channel configuration. It is shipped in bulk package . The product has a 60v drain to source voltage. The product's input capacitance at maximum includes 23.6pf @ 10v. The product is available in surface mount configuration. 6-tssop is the supplier device package value. The maximum power of the product is 285mw (ta), 870mw (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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