NXP USA Inc. PDTB123ET,215
Product Information
Resistor - Base (R1):
2.2 kOhms
HTSUS:
8541.21.0095
Current - Collector (Ic) (Max):
500 mA
Resistor - Emitter Base (R2):
2.2 kOhms
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Transistor Type:
PNP - Pre-Biased
Package:
Bulk
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23
Power - Max:
250 mW
Base Product Number:
PDTB123
ECCN:
EAR99
Checking for live stock
FAQs
Yes. You can also search PDTB123ET,215 on website for other similar products.
We accept all major payment methods for all products including ET25504976. Please check your shopping cart at the time of order.
You can order NXP USA Inc. brand products with PDTB123ET,215 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single, Pre-Biased Bipolar Transistors category are shipped in lowest possible time.
You will get a confirmation email regarding your order of NXP USA Inc. PDTB123ET,215. You can also check on our website or by contacting our customer support team for further order details on NXP USA Inc. PDTB123ET,215.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET25504976 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "NXP USA Inc." products on our website by using Enrgtech's Unique Manufacturing Part Number ET25504976.
Yes. We ship PDTB123ET,215 Internationally to many countries around the world.
This is manufactured by NXP USA Inc.. The manufacturer part number is PDTB123ET,215. Resistor - Base - 2.2 kohms. It is assigned with possible HTSUS value of 8541.21.0095. The maximum collector current includes 500 ma. Resistor - Emittor Base (R2) - 2.2 kohms. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 40 @ 50ma, 5v is the minimum DC current gain at given voltage. The 300mv @ 2.5ma, 50ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a pnp - pre-biased type. It is shipped in bulk package . In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. sot-23 is the supplier device package value. The maximum power of the product is 250 mw. Moreover, it corresponds to pdtb123, a base product number of the product. The product is designated with the ear99 code number.
Reviews
Don’t hesitate to ask questions for better clarification.