NXP Semiconductors SMMUN2116LT1G

NXP Semiconductors

Product Information

Resistor - Base (R1):
4.7 kOhms
Transistor Type:
PNP - Pre-Biased
Mounting Type:
Surface Mount
RoHS Status:
RoHS non-compliant
Current - Collector Cutoff (Max):
500nA
Series:
Automotive, AEC-Q101
Vce Saturation (Max) @ Ib, Ic:
250mV @ 1mA, 10mA
Package:
Bulk
REACH Status:
Vendor Undefined
Supplier Device Package:
SOT-23-3 (TO-236)
Power - Max:
246 mW
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 5mA, 10V
Voltage - Collector Emitter Breakdown (Max):
50 V
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This is manufactured by NXP Semiconductors. The manufacturer part number is SMMUN2116LT1G. Resistor - Base - 4.7 kohms. The transistor is a pnp - pre-biased type. The product is available in surface mount configuration. The product is rohs non-compliant. In addition, 500na is the maximum current at collector cutoff. The product automotive, aec-q101, is a highly preferred choice for users. The 250mv @ 1ma, 10ma is the maximum Vce saturation. It is shipped in bulk package . In addition, it is vendor undefined. sot-23-3 (to-236) is the supplier device package value. The maximum power of the product is 246 mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 100 ma. Furthermore, 160 @ 5ma, 10v is the minimum DC current gain at given voltage. The maximum collector emitter breakdown voltage of the product is 50 v.

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