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United Kingdom
This is manufactured by NXP Semiconductors. The manufacturer part number is PDTD123ET,215. Resistor - Base - 2.2 kohms. The maximum collector current includes 500 ma. The product is rohs non-compliant. The maximum collector emitter breakdown voltage of the product is 50 v. Resistor - Emittor Base (R2) - 2.2 kohms. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 40 @ 50ma, 5v is the minimum DC current gain at given voltage. It is shipped in bulk package . In addition, it is vendor undefined. The transistor is a npn - pre-biased type. The 300mv @ 2.5ma, 50ma is the maximum Vce saturation. In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. The product pdtd123e, is a highly preferred choice for users. to-236ab is the supplier device package value. The maximum power of the product is 250 mw.
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