Toshiba Semiconductor and Storage RN2417(TE85L,F)

RN2417-TE85L-F- Toshiba Semiconductor and Storage RN2417(TE85L,F)
Toshiba Semiconductor and Storage

Product Information

Resistor - Base (R1):
10 kOhms
HTSUS:
8541.21.0075
Current - Collector (Ic) (Max):
100 mA
Resistor - Emitter Base (R2):
4.7 kOhms
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 10mA, 5V
edacadModel:
RN2417(TE85L,F) Models
Frequency - Transition:
200 MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
50 V
edacadModelUrl:
/en/models/11478778
Transistor Type:
PNP - Pre-Biased
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
40 Weeks
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
S-Mini
Power - Max:
200 mW
Base Product Number:
RN2417
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2417(TE85L,F). Resistor - Base - 10 kohms. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector current includes 100 ma. Resistor - Emittor Base (R2) - 4.7 kohms. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 30 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 200 mhz. The 300mv @ 250µa, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a pnp - pre-biased type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 40 weeks standard lead time. In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. s-mini is the supplier device package value. The maximum power of the product is 200 mw. Moreover, it corresponds to rn2417, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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