Toshiba Semiconductor and Storage RN1101ACT(TPL3)
Product Information
Base Part Number:
2SA1837
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 80mA 100mW Surface Mount CST3
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 10mA, 5V
Transistor Type:
NPN - Pre-Biased
Mounting Type:
Surface Mount
Resistor - Base (R1):
4.7 kOhms
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 5mA
Supplier Device Package:
CST3
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
4.7 kOhms
Power - Max:
100mW
Customer Reference:
Package / Case:
SC-101, SOT-883
Current - Collector (Ic) (Max):
80mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
Toshiba Semiconductor and Storage
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Yes. Our products in Single, Pre-Biased Bipolar Transistors category are shipped in lowest possible time.
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Yes. We ship RN1101ACT(TPL3) Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1101ACT(TPL3). Base Part Number: 2sa1837. It features pre-biased bipolar transistor (bjt) npn - pre-biased 50v 80ma 100mw surface mount cst3. Furthermore, 30 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - pre-biased type. The product is available in surface mount configuration. Resistor - Base - 4.7 kohms. The 150mv @ 500µa, 5ma is the maximum Vce saturation. cst3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 4.7 kohms. The maximum power of the product is 100mw. Moreover, the product comes in sc-101, sot-883. The maximum collector current includes 80ma. In addition, 500na is the maximum current at collector cutoff. The toshiba semiconductor and storage's product offers user-desired applications.
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