Toshiba Semiconductor and Storage RN2106ACT(TPL3)

RN2106ACT-TPL3- Toshiba Semiconductor and Storage RN2106ACT(TPL3)
Toshiba Semiconductor and Storage

Product Information

Resistor - Base (R1):
4.7 kOhms
Current - Collector (Ic) (Max):
80 mA
HTSUS:
8541.21.0095
RoHS Status:
RoHS Compliant
Resistor - Emitter Base (R2):
47 kOhms
Package / Case:
SC-101, SOT-883
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
title:
RN2106ACT(TPL3)
Voltage - Collector Emitter Breakdown (Max):
50 V
Manufacturer:
Toshiba Semiconductor and Storage
Transistor Type:
PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic:
150mV @ 250µA, 5mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
CST3
Packaging:
Tape & Reel (TR)
Power - Max:
100 mW
Base Product Number:
RN2106
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2106ACT(TPL3). Resistor - Base - 4.7 kohms. The maximum collector current includes 80 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs compliant. Resistor - Emittor Base (R2) - 47 kohms. Moreover, the product comes in sc-101, sot-883. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The maximum collector emitter breakdown voltage of the product is 50 v. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a pnp - pre-biased type. The 150mv @ 250µa, 5ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. cst3 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 100 mw. Moreover, it corresponds to rn2106, a base product number of the product. The product is designated with the ear99 code number.

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